High brightness turquoise light-emitting diodes based on ZnO microwires-Reference-Cited by-同舟云学术

High brightness turquoise light-emitting diodes based on ZnO microwires

Published:2015 Issue:109 Volume:5 Page:89895-89899
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Dengkui¹²³⁴⁵,Wang Fei¹²³⁴⁵,Zhao Bin¹²³⁴⁵,Wang Yunpeng¹²³⁴⁵,Zhao Dongxu¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescence and Applications

2. Changchun Institute of Optics

3. Fine Mechanics and Physics

4. Chinese Academy of Sciences

5. Changchun 130021

Abstract

ZnO microwire clusters with green emission have been fabricated and the luminescence mechanism and relationship of the point defect and emission were studied. A turquoise ZnO microwire/n-GaN heterojunction LED with an electroluminescence wavelength of 490 nm was constructed.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA17627A

Reference32 articles.

1. Strong green luminescence in quaternary InAlGaN thin films

2. Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser

3. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

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