Deep metal-assisted chemical etching using a porous monolithic AgAu layer to develop neutral-colored transparent silicon photovoltaics

Author:

Shin HyeonOh12ORCID,Lee Kangmin3ORCID,Mun Jinhong1,Roh Deok-Ho12ORCID,Hwang Eunhye12ORCID,Park Jeonghwan3ORCID,Lee Geunsik1ORCID,Seo Kwanyong234ORCID,Kwon Tae-Hyuk1245ORCID

Affiliation:

1. Department of Chemistry, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

2. Center for Wave Energy Materials, UNIST, Ulsan 44919, Republic of Korea

3. School of Energy and Chemical Engineering, UNIST, Ulsan 44919, Republic of Kore

4. Graduate School of Carbon Neutrality, UNIST, Ulsan 44919, Republic of Korea

5. Graduate School of Semiconductor Materials and Device Engineering, UNIST, Ulsan 44919, Republic of Korea

Abstract

We report deep metal-assisted chemical etching using a porous monolithic AgAu layer on crystalline silicon as an alternative to the expensive deep reactive ion etching for fabricating neutral-colored transparent crystalline silicon photovoltaics.

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Ulsan National Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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