Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor-Reference-Cited by-同舟云学术

Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor

Published:2018 Issue:40 Volume:6 Page:10714-10722
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shackery Iman¹²³⁴,Pezeshki Atiye⁵²³⁴⁶,Park Jae Young¹²³⁴,Palanivel Umadevi¹²³⁴⁷,Kwon Hyeok Jae⁵²³⁴,Yoon Hyong Seo¹²³⁴,Im Seongil⁵²³⁴,Cho Jin Soo⁷⁸⁹¹⁰,Jun Seong Chan¹²³⁴^ORCID

Affiliation:

1. School of Mechanical Engineering

2. Yonsei University

3. Seoul 03722

4. South Korea

5. Institute of Physics and Applied Physics

6. Department of Materials Science and Engineering

7. Department of Computer Engineering

8. Gachon University

9. Gyeonggi-do 461-701

10. Korea

Abstract

For the first time, we connect in series two α-MoTe₂-based Schottky diodes (SDs) to form a back-to-back diode using the micromechanical exfoliation method. Such structure shows excellent performance toward chemical vapor sensing.

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02635A

Reference65 articles.

1. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

2. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials