Pressure-induced changes in the electronic structure and enhancement of the thermoelectric performance of SnS2: a first principles study
Author:
Affiliation:
1. Micro and Nano Devices Group
2. Department of Metallurgy and Materials Engineering
3. Pakistan Institute of Engineering and Applied Sciences
4. Islamabad
5. Pakistan
6. Department of Physics and Applied Mathematics
Abstract
Hydrostatic pressure reduces the band gap and increases the ZT value of SnS2.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA06455A
Reference74 articles.
1. G. S. Nolas , J.Sharp and J.Goldsmid, Thermoelectrics: basic principles and new materials developments, Springer Science & Business Media, 2013
2. Density functional study on the hole doping of single-layer SnS2 with metal element X (X = Li, Mg, and Al)
3. Thermoelectric Materials, Phenomena, and Applications: A Bird's Eye View
4. Anisotropic thermoelectric properties of layered compounds in SnX2 (X = S, Se): a promising thermoelectric material
5. Experimental Studies on Anisotropic Thermoelectric Properties and Structures of n-Type Bi2Te2.7Se0.3
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