A high-performance self-powered photodetector based on SnP<sub>2</sub>S<sub>6</sub> in the visible light region-Reference-Cited by-同舟云学术

A high-performance self-powered photodetector based on SnP₂S₆ in the visible light region

Published:2023 Issue:48 Volume:11 Page:16941-16949
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Shuxian¹^ORCID,Song Jiaming¹²³^ORCID,Zong Linghao¹,Yang Juanjuan¹,Li Bingda¹,Teng Feng¹^ORCID,Hu Peng¹^ORCID,Fan Haibo¹^ORCID,Zhao Xin⁴

Affiliation:

1. School of Physics, Northwest University, Xi’an 710127, China

2. Carbon Neutrality College (Yulin), Northwest University, China

3. Shaanxi Key Laboratory for Carbon Neutral Technology, China

4. School of Optoelectronic Engineering, Xi'an Technological University, Xi’an 710021, China

Abstract

The SnP2S6-based MSM photodetector with asymmetric electrode contacts demonstrated prominent self-powered photoelectric response in visible light region, which provides a possible way for its application in portable energy saving devices.

Funder

Key Research and Development Projects of Shaanxi Province

China Scholarship Council

National Natural Science Foundation of China

Education Department of Shaanxi Province

Natural Science Foundation of Shaanxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC03312K

Reference60 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. A library of atomically thin metal chalcogenides

3. Two-dimensional material nanophotonics

4. Hexagonal boron nitride is an indirect bandgap semiconductor

5. Naturally occurring van der Waals materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High carrier mobility and strong anisotropy in the family of monolayer SnP2X6 (X=S, Se, Te);Computational Materials Science;2024-09

2. Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe₃/MoS₂;ACS Applied Materials & Interfaces;2024-06-11