Abundant hydroxyl groups decorated on nitrogen vacancy-embedded g-C3N4 with efficient photocatalytic hydrogen evolution performance
Author:
Affiliation:
1. Powder Metallurgy Research Institute
2. Central South University
3. Changsha 410083
4. China
Abstract
Engineering hydroxyl and N vacancies on g-C3N4 led to dual mitigation of the recombination rate of photogenerated carriers, which was achieved by enriched hydroxyl groups trapping the holes and stable N vacancies capturing the electrons.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Catalysis
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CY/D1CY00359C
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