Strain tuning of the Stokes shift in atomically thin semiconductors-Reference-Cited by-同舟云学术

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Strain tuning of the Stokes shift in atomically thin semiconductors

Published:2020 Issue:40 Volume:12 Page:20786-20796
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Niehues Iris¹²³⁴^ORCID,Marauhn Philipp⁵²³⁴,Deilmann Thorsten⁵²³⁴^ORCID,Wigger Daniel⁶⁷⁸⁹^ORCID,Schmidt Robert¹²³⁴^ORCID,Arora Ashish¹²³⁴^ORCID,Michaelis de Vasconcellos Steffen¹²³⁴^ORCID,Rohlfing Michael⁵²³⁴,Bratschitsch Rudolf¹²³⁴^ORCID

Affiliation:

1. Institute of Physics and Center for Nanotechnology

2. University of Münster

3. 48149 Münster

4. Germany

5. Institute of Solid State Theory

6. Department of Theoretical Physics

7. Wrocław University of Science and Technology

8. 50-370 Wrocław

9. Poland

Abstract

We measure the Stokes shift of excitonic transitions in 2D semiconductors and tune it by mechanical strain.

Funder

Deutsche Forschungsgemeinschaft

Narodowa Agencja Wymiany Akademickiej

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04557H

Reference43 articles.

1. Light–matter interaction in transition metal dichalcogenides and their heterostructures

2. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

3. Phonon Sidebands in Monolayer Transition Metal Dichalcogenides

4. Strain Control of Exciton–Phonon Coupling in Atomically Thin Semiconductors

5. Theory of the absorption line shape in monolayers of transition metal dichalcogenides

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