Physicochemically modified high-resolution tin oxide thin film using soft imprinting-Reference-Cited by-同舟云学术

Physicochemically modified high-resolution tin oxide thin film using soft imprinting

Published:2022 Issue:41 Volume:12 Page:26696-26703
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kim Dong Hyun¹,Lee Dong Wook¹,Oh Jin Young¹,Lee Ju Hwan¹,Won Jonghoon¹,Jang Jong In²³,Jeong Hae-Chang²³,Seo Dae-Shik¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

2. Department of Smart Manufacturing Engineering, Changwon National University, 20 Changwondaehak-ro, Changwon, Gyeongnam 51140, Republic of Korea

3. Department of Electrical Electronic and Control Engineering, Changwon National University, 20 Changwondaehak-ro, Changwon, Gyeongnam 51140, Republic of Korea

Abstract

We carried out nanoimprinting lithography on solution-processed tin oxide (SnO) film for use as a liquid crystal (LC) alignment layer, for which we used a parallel configuration.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA04459E

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