Optimization of metal-to-insulator phase transition properties in polycrystalline VO2 films for terahertz modulation applications by doping-Reference-Cited by-同舟云学术

Optimization of metal-to-insulator phase transition properties in polycrystalline VO2 films for terahertz modulation applications by doping

Published:2018 Issue:7 Volume:6 Page:1722-1730
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ji Chunhui¹²³⁴⁵,Wu Zhiming¹²³⁴⁵^ORCID,Wu Xuefei¹²³⁴⁵^ORCID,Feng Haoqian¹²³⁴⁵,Wang Jun¹²³⁴⁵,Huang Zehua¹²³⁴⁵,Zhou Hongxi¹²³⁴⁵,Yao Wei¹²³⁴⁵,Gou Jun¹²³⁴⁵,Jiang Yadong¹²³⁴⁵

Affiliation:

1. School of Optoelectronic Information

2. State Key Laboratory of Electronic Thin Films and Integrated Devices

3. University of Electronic Science and Technology of China

4. Chengdu

5. China

Abstract

A low T_C and small ΔH were successfully achieved without significantly impairing THz MD by doping through an appropriate annealing process.

Funder

National Natural Science Foundation of China

Science Fund for Creative Research Groups

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05536F

Reference59 articles.

1. Measurement of a solid-state triple point at the metal–insulator transition in VO2

2. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

3. Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition inVO2

4. Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices

5. Photoinduced phase transition in VO_2 nanocrystals: ultrafast control of surface-plasmon resonance

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