Growth of 2H stacked WSe2 bilayers on sapphire-Reference-Cited by-同舟云学术

Growth of 2H stacked WSe2 bilayers on sapphire

Published:2019 Issue:6 Volume:4 Page:1434-1442
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Han Ali¹²³⁴,Aljarb Areej¹²³⁴,Liu Sheng⁵⁶⁷⁸,Li Peng¹²³⁴,Ma Chun¹²³⁴,Xue Fei¹²³⁴,Lopatin Sergei⁹¹⁰⁴^ORCID,Yang Chih-Wen¹²³⁴,Huang Jing-Kai¹²³⁴¹¹,Wan Yi¹²³⁴,Zhang Xixiang¹²³⁴^ORCID,Xiong Qihua⁵⁶⁷⁸¹²,Huang Kuo-Wei¹²³⁴^ORCID,Tung Vincent¹²³⁴¹³,Anthopoulos Thomas D.¹²³⁴^ORCID,Li Lain-Jong¹²³⁴¹¹^ORCID

Affiliation:

1. Physical Sciences and Engineering Division (PSE)

2. King Abdullah University of Science and Technology

3. Thuwal 23955-6900

4. Kingdom of Saudi Arabia

5. Division of Physics and Applied Physics

6. School of Physical and Mathematical Sciences

7. Nanyang Technological University

8. Singapore

9. King Abdullah University of Science and Technology (KAUST)

10. Thuwal

11. School of Materials Science and Engineering

12. MajuLab

13. Molecular Foundry Division

Abstract

Bilayer WSe₂ nuclei were initially grown along the atomic steps of a sapphire substrate, resembling a “graphoepitaxial mechanism” and gradually formed into overlapped 2H stacked WSe₂ bilayers.

Funder

King Abdullah University of Science and Technology

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NH/C9NH00260J

Reference55 articles.

1. How 2D semiconductors could extend Moore’s law

2. Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors