An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination-Reference-Cited by-同舟云学术

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

Published:2015 Issue:40 Volume:7 Page:16658-16665
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhao Chao¹²³⁴²,Ng Tien Khee¹²³,Prabaswara Aditya¹²³,Conroy Michele⁵⁶⁷,Jahangir Shafat⁸⁹¹⁰,Frost Thomas⁸⁹¹⁰,O'Connell John⁵⁶⁷,Holmes Justin D.⁵⁶⁷,Parbrook Peter J.⁵⁶⁷,Bhattacharya Pallab⁸⁹¹⁰,Ooi Boon S.¹²³

Affiliation:

1. Photonics Laboratory

2. King Abdullah University of Science and Technology (KAUST)

3. Thuwal 23955-6900, Saudi Arabia

4. Imaging and Characterization Core Lab

5. Tyndall National Institute

6. University College Cork

7. Cork, Ireland

8. Department of Electrical Engineering and Computer Science

9. University of Michigan

10. Ann Arbor, USA

Abstract

An organic passivation process for nitride nanowires was first proposed to reduce Shockley–Read–Hall non-radiative recombination of nanowire light emitting diodes.

Funder

King Abdullah University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR03448E

Reference61 articles.

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