C<sub>3</sub>N<sub>2</sub>: the missing part of highly stable porous graphitic carbon nitride semiconductors-Reference-Cited by-同舟云学术

C₃N₂: the missing part of highly stable porous graphitic carbon nitride semiconductors

Published:2023 Issue:5 Volume:8 Page:662-673
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Cai Xinyong¹^ORCID,Chen Jiao¹,Wang Hongyan¹^ORCID,Ni Yuxiang¹^ORCID,Chen Yuanzheng¹²^ORCID,King R. Bruce³

Affiliation:

1. School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China

2. Beijing Computational Science Research Center, Haidian District, Beijing 100193, China

3. Department of Chemistry and Center for Computational Chemistry, University of Georgia, Athens, Georgia 30602, USA

Abstract

With two suitable organic units (TAPA and HADQ), H-C3N2 and T-C3N2 are designed and proposed based on the high possibility for experimental realization. They show different structural features and exceptional optoelectronic properties.

Funder

China Postdoctoral Science Foundation

Department of Science and Technology of Sichuan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NH/D2NH00440B

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