High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells-Reference-Cited by-同舟云学术

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High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells

Published:2015 Issue:18 Volume:7 Page:8304-8308
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hao L. Z.¹²³,Gao W.¹²³,Liu Y. J.¹²³,Han Z. D.¹²³,Xue Q. Z.¹²³,Guo W. Y.¹²³,Zhu J.⁴⁵⁶,Li Y. R.⁴⁵⁶

Affiliation:

1. College of Science

2. China University of Petroleum

3. Qingdao, People's Republic of China

4. State Key Laboratory of Electronic Thin Films and Integrated Devices

5. University of Electronic Science and Technology of China

6. Chengdu 610054, People's Republic of China

Abstract

A solar cell based on the n-MoS₂/i-SiO₂/p-Si heterojunction is fabricated.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR01275A

Reference43 articles.

1. Interfacial Nondegenerate Doping of MoS2 and Other Two-Dimensional Semiconductors

2. Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence

3. Graphene/gallium arsenide-based Schottky junction solar cells

4. Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

5. Theoretical approaches to graphene and graphene-based materials

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