Defect-concentration dependence of electrical transport mechanisms in CuO nanowires

Author:

Lin Zufang12345,Zhan Runze12345,Li Luying6789,Liu Huihui101112813,Jia Shuangfeng101112813,Chen Huanjun12345,Tang Shuai12345ORCID,She Juncong12345,Deng Shaozhi12345,Xu Ningsheng12345,Chen Jun12345ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies

2. Provincial Key Laboratory of Display Material and Technology

3. School of Electronics and Information Technology

4. Sun Yat-sen University

5. School of Physics and Engineering

6. Wuhan National Laboratory for Optoelectronics

7. Huazhong University of Science and Technology

8. Wuhan

9. 430074 China

10. School of Physics and Technology

11. Center for Electron Microscopy

12. Wuhan University

13. 430072 China

Abstract

Defect concentration is pinpointed to be the main parameter that determine the transportation in CuO nanowire by statistical results.

Funder

Guangdong Provincial Science and Technology Department

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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