Negative-pressure sulfurization of antimony sulfide thin films for generating a record open-circuit voltage of 805 mV in solar cell applications-Reference-Cited by-同舟云学术

Negative-pressure sulfurization of antimony sulfide thin films for generating a record open-circuit voltage of 805 mV in solar cell applications

Published:2023 Issue:36 Volume:11 Page:19298-19307
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Peng Xiaoqi¹²,Yang Junjie¹²,Zhao Qi¹²,Gao Huihui¹²,Huang Yuqian¹²,Wang Haolin¹²,Zhu Changfei¹²,Tang Rongfeng¹²^ORCID,Chen Tao¹²^ORCID

Affiliation:

1. Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China

2. Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230051, China

Abstract

Herein, we developed a new sulfurization method to obtain S-rich Sb2S3, which passivated the internal deep-level defects of the film. Finally, a record open-circuit voltage of 805 mV was achieved, which is the highest value for Sb2S3 solar cells.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Hefei Science Center, Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D3TA04604D

Reference57 articles.

1. Recent progress in crystalline silicon solar cells