Synthesis of rGO–Zn0.8Cd0.2S via in situ reduction of GO for the realization of a Schottky diode with low barrier height and highly enhanced photoresponsivity-Reference-Cited by-同舟云学术

Synthesis of rGO–Zn0.8Cd0.2S via in situ reduction of GO for the realization of a Schottky diode with low barrier height and highly enhanced photoresponsivity

Published:2017 Issue:13 Volume:41 Page:5476-5486
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Das Mrinmay¹²³,Datta Joydeep¹²³,Jana Rajkumar¹²³,Sil Sayantan¹²³,Halder Soumi¹²³,Ray Partha P.¹²³^ORCID

Affiliation:

1. Department of Physics, Jadavpur University

2. Kolkata – 700 032

3. India

Abstract

Application of rGO–Zn_0.8Cd_0.2S in Schottky barrier diode with low barrier height and highly enhanced photoresponse.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NJ/C7NJ00428A

Reference50 articles.

1. Graphene: The New Two-Dimensional Nanomaterial

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3. Schottky junction solar cells based on graphene with different numbers of layers

4. Graphene-Silicon Schottky Diodes

5. Graphene transistors

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