Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition-Reference-Cited by-同舟云学术

Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition

Published:2017 Issue:45 Volume:7 Page:27969-27973
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhao Yu¹²³⁴⁵,Lee Hyunjea⁶²³⁴,Choi Woong⁷⁸⁹⁴,Fei Weidong⁵¹⁰¹¹¹²,Lee Cheol Jin¹²³⁴⁶^ORCID

Affiliation:

1. Department of Micro/Nano Systems

2. Korea University

3. Seoul 02841

4. Korea

5. School of Materials Science and Engineering

6. School of Electrical Engineering

7. School of Advanced Materials Engineering

8. Kookmin University

9. Seoul 02707

10. Harbin Institute of Technology

11. Harbin 150001

12. PR China

Abstract

We report the synthesis of large-area monolayer MoSe₂ films extended up to a millimeter scale on SiO₂/Si substrates by atmospheric pressure chemical vapor deposition (CVD).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA03642F

Reference42 articles.

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2. Single-layer MoS2 transistors

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4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

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