The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence
Author:
Affiliation:
1. Laboratory of Solid State Ionics
2. School of Materials Science and Engineering
3. Huazhong University of Science and Technology
4. Wuhan 430074
5. P. R. China
Abstract
Different Schottky barrier heights are responsible for the different resistance states in the metallic electrode/donor-doped SrTiO3 stack.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2015/CP/C4CP04151H
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1. Electric-pulse-induced reversible resistance change effect in magnetoresistive films
2. Spatially extended nature of resistive switching in perovskite oxide thin films
3. Reproducible switching effect in thin oxide films for memory applications
4. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
5. Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films
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