A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications-Reference-Cited by-同舟云学术

A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

Published:2017 Issue:26 Volume:5 Page:13400-13410
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Xia Congxin¹²³⁴^ORCID,Du Juan¹²³⁴,Xiong Wenqi¹²³⁴,Jia Yu⁵⁶⁷⁴,Wei Zhongming⁸⁹¹⁰⁴^ORCID,Li Jingbo⁸⁹¹⁰⁴

Affiliation:

1. College of Physics and Material Science

2. Henan Normal University

3. Xinxiang 453007

4. China

5. Key Laboratory for Special Functional Materials of Ministry of Education

6. Henan University

7. Kaifeng 475004

8. Institute of Semiconductors

9. Chinese Academy of Sciences

10. Beijing 100083

Abstract

Type-II band alignment, a suitable direct gap (1.519 eV), superior optical-absorption (∼10⁵) and a broad spectrum make the GeSe/SnS heterobilayer a promising material for photovoltaic applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TA/C7TA02109G

Reference55 articles.

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