Vertical junction photodetectors based on reduced graphene oxide/silicon Schottky diodes-Reference-Cited by-同舟云学术

Vertical junction photodetectors based on reduced graphene oxide/silicon Schottky diodes

Published:2014 Issue:9 Volume:6 Page:4909-4914
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhu Miao¹²³⁴⁵,Li Xinming⁶⁷,Guo Yibo⁸⁴⁵,Li Xiao¹²³⁴⁵,Sun Pengzhan¹²³⁴⁵,Zang Xiaobei¹²³⁴⁵,Wang Kunlin¹²³⁴⁵,Zhong Minlin¹²³⁴⁵,Wu Dehai⁸⁴⁵,Zhu Hongwei¹²³⁴⁵

Affiliation:

1. School of Materials Science and Engineering

2. State Key Laboratory of New Ceramics and Fine Processing

3. Key Laboratory of Materials Processing Technology of MOE

4. Tsinghua University

5. Beijing 100084, China

6. National Center for Nanoscience and Technology

7. Beijing 100190, China

8. Department of Mechanical Engineering

Abstract

The Schottky junction properties and photoelectric conversion of reduced graphene oxide (RGO)-based devices have been investigated. The responsivity and detectivity of the photodetectors were examined, proving that the RGO material could be effectively utilized as an electrode material.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR00056K

Reference36 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Graphene-On-Silicon Schottky Junction Solar Cells

4. High Efficiency Graphene Solar Cells by Chemical Doping

5. Colloidal Antireflection Coating Improves Graphene–Silicon Solar Cells

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