Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN-Reference-Cited by-同舟云学术

Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN

Published:2024 Issue:10 Volume:26 Page:8504-8514
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Jiao¹,Bao Wenlong²,Wang Zhaoliang¹^ORCID,Xu Ke³,Tang Dawei⁴

Affiliation:

1. Thermal Engineering and Power Department, China University of Petroleum, Qingdao 266580, China

2. Qingdao Cigarette Factory, China Tobacco Shandong Industrial Co., Ltd, Qingdao 266100, Shandong, China

3. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China

4. Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, Dalian University of Technology, Dalian 116024, China

Abstract

Nano-metallic Al films are usually attached as source and drain in the external circuits of gallium nitride-based field effect transistors, and thus unbalanced carrier transport in Al/GaN is critical for thermal management.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP06054C

Reference55 articles.

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2. G.Lian . The Pros and Cons of GaN Family of Materials Compared with other Alternatives Regarding Optoelectronic Applications[C]//2020 7th International Forum on Electrical Engineering and Automation (IFEEA), 2020

3. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers

4. k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

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