InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

Author:

Liao Liping1,Wu Bing1,Kovalska Evgeniya1ORCID,Oliveira Filipa M.1,Azadmanjiri Jalal1,Mazánek Vlastimil1,Valdman Lukáš1,Spejchalová Lucie1,Xu Cunyun2,Levinský Petr3ORCID,Hejtmánek Jiří3ORCID,Sofer Zdeněk1ORCID

Affiliation:

1. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic

2. Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China

3. FZU – Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic

Abstract

We report the PEC characterization of InSe/InSe(Ge) van der Waals heterostructure. As-prepared heterostructure can improve the photoresponse characteristics of the sole InSe case. The mechanism of enhanced PEC performance and charge transfer process was explored.

Funder

Grantová Agentura České Republiky

China Scholarship Council

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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