Pressure-driven semiconducting-semimetallic transition in SnSe-Reference-Cited by-同舟云学术

Pressure-driven semiconducting-semimetallic transition in SnSe

Published:2016 Issue:6 Volume:18 Page:5012-5018
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yan Jiejuan¹²³⁴⁵,Ke Feng⁶⁷⁵,Liu Cailong¹²³⁴⁵,Wang Li¹²³⁴⁵,Wang Qinglin⁶⁷⁵,Zhang Junkai⁶⁷⁵,Li Guanghui¹²³⁴⁵,Han Yonghao¹²³⁴⁵,Ma Yanzhang⁶⁷⁵⁸⁹,Gao Chunxiao¹²³⁴⁵

Affiliation:

1. State Key Lab for Superhard Materials

2. Institute of Atomic and Molecular Physics

3. Jilin University

4. Changchun 130012

5. China

6. Center for High Pressure Science and Technology Advanced Research

7. Shanghai 201203

8. Department of Mechanical Engineering

9. Texas Tech University

Abstract

A semiconducting-semimetallic transition was observed to occur at 12.6 GPa, followed by an orthorhombic to monoclinic structural transition.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP07377D

Reference46 articles.

1. The Consequences of Kesterite Equilibria for Efficient Solar Cells

2. Chemically Deposited SnSe Thin Films: Thermal Stability and Solar Cell Application

3. Solution-Phase Synthesis of SnSe Nanocrystals for Use in Solar Cells

4. Electrodeposition and growth mechanism of SnSe thin films

5. Effects of annealing on the properties of SnSe films

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