Correlation between Seebeck coefficients and electronic structures of nitrogen- or boron-doped reduced graphene oxide via thermally activated carrier transport-Reference-Cited by-同舟云学术

Correlation between Seebeck coefficients and electronic structures of nitrogen- or boron-doped reduced graphene oxide via thermally activated carrier transport

Published:2018 Issue:32 Volume:6 Page:15577-15584
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Bark Hyunwoo¹²³⁴^ORCID,Lee Wonmok⁵⁶⁷⁴,Lee Hyunjung¹²³⁴

Affiliation:

1. School of Advanced Materials Engineering

2. Kookmin University

3. Seongbuk-gu

4. Republic of Korea

5. Department of Chemistry

6. Sejong University

7. Gwangjin-gu

Abstract

In this study, we report the relative electronic structure of thermally reduced graphene oxide (TrGO) using energy-dependent Seebeck coefficient.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TA/C8TA03545H

Reference50 articles.

1. Chalcogenidometallate Clusters as Surface Ligands for PbSe Nanocrystal Field-Effect Transistors

2. Engineering Charge Injection and Charge Transport for High Performance PbSe Nanocrystal Thin Film Devices and Circuits

3. Size- and Temperature-Dependent Charge Transport in PbSe Nanocrystal Thin Films

4. Electroluminescence in conjugated polymers

5. High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

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