Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control
Author:
Affiliation:
1. Centre for Theoretical Studies
2. Indian Institute of Technology
3. Kharagpur
4. India
5. Department of Physics, Indian Institute of Technology
Abstract
It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players.
Funder
Council of Scientific and Industrial Research
Ministry of Human Resource Development
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP01500G
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