Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry-Reference-Cited by-同舟云学术

Junction behavior of n-Si photoanodes protected by thin Ni elucidated from dual working electrode photoelectrochemistry

Published:2017 Issue:2 Volume:10 Page:570-579
ISSN:1754-5692
Container-title:Energy & Environmental Science
language:en
Short-container-title:Energy Environ. Sci.

Author:

Laskowski Forrest A. L.¹²³⁴,Nellist Michael R.¹²³⁴,Venkatkarthick Radhakrishnan¹²³⁴⁵,Boettcher Shannon W.¹²³⁴^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry

2. University of Oregon

3. Eugene

4. USA

5. Electroinorganic Chemicals Division

Abstract

Dual-working-electrode photoelectrochemical techniques are implemented to characterize semiconductor–catalyst–solution interfaces in protected n-Si photoanodes in situ for the first time.

Funder

National Science Foundation

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/EE/C6EE03505A

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