In situ growth of graphene on hexagonal boron nitride for electronic transport applications-Reference-Cited by-同舟云学术

In situ growth of graphene on hexagonal boron nitride for electronic transport applications

Published:2020 Issue:2 Volume:8 Page:380-386
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Arjmandi-Tash Hadi¹^ORCID

Affiliation:

1. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

Abstract

Direct synthesis of graphene on h-BN is a rapidly growing approach to achieve defect-free van der Waals heterostructures with precisely aligned crystals. This review article covers the developments in the field, from the inception to current state.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC04779D

Reference41 articles.

1. Carrier Transport in Two-Dimensional Graphene Layers

2. Approaching ballistic transport in suspended graphene

3. How Close Can One Approach the Dirac Point in Graphene Experimentally?

4. Boron nitride substrates for high-quality graphene electronics

5. Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene

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