Intrinsic ferromagnetism and quantum transport transition in individual Fe-doped Bi2Se3 topological insulator nanowires-Reference-Cited by-全球学者库

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Intrinsic ferromagnetism and quantum transport transition in individual Fe-doped Bi2Se3 topological insulator nanowires

Published:2017 Issue:34 Volume:9 Page:12372-12378
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Niu Wei¹²³⁴⁵,Du Kai⁶²⁷⁸⁹,Wang Shuangbao¹⁰²⁴⁵⁹,Zhang Minhao¹²³⁴⁵,Gao Ming¹²³⁴⁵,Chen Yongda¹²³⁴⁵,Liu Hao⁶²⁷⁸⁹,Zhou Wei¹¹¹²¹³¹⁴⁹,Song Fengqi¹⁵²⁴⁵⁹,Wang Peng¹⁰²⁴⁵⁹,Xu Yongbing¹²³⁴⁵,Wang Xuefeng¹²³⁴⁵^ORCID,Shen Jian⁶²⁷⁸⁹^ORCID,Zhang Rong¹²³⁴⁵

Affiliation:

1. National Laboratory of Solid State Microstructures

2. Collaborative Innovation Center of Advanced Microstructures

3. School of Electronic Science and Engineering

4. Nanjing University

5. Nanjing 210093

6. State Key Laboratory of Surface Physics and Department of Physics

7. Fudan University

8. Shanghai 200433

9. China

10. College of Engineering and Applied Sciences

11. Shenzhen Key Laboratory of Laser Engineering

12. College of Optoelectronic Engineering

13. Shenzhen University

14. Shenzhen 518060

15. School of Physics

Abstract

Fe-Doped Bi₂Se₃ nanowires show intrinsic ferromagnetism and gapped topological surface states, paving a way for future nanodevice applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR02807E

Reference51 articles.

1. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

2. Topological insulator nanostructures

3. Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS

4. Large magnetoresistance in high mobility topological insulator Bi2Se3

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1. DFT calculations of the structural, elastic, and electronic properties of (Bi_1−xFe_x)₂Te₃ chalcogenides;Physica Scripta;2024-01-19

2. Exchange Interaction‐Driven Surface State Hybridization in Bi₂Se₃ Topological Insulator;Advanced Quantum Technologies;2023-06-07

3. An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3;Materials;2022-05-28

4. Circular photogalvanic effect of surface states in the topological insulator Bi₂(Te_0.23Se_0.77)₃ nanowires grown by chemical vapor deposition;Journal of Applied Physics;2022-03-21

5. Recent Advances on Spin-Polarized Two-Dimensional Electron Gases at Oxide Interfaces;ACS Applied Electronic Materials;2021-01-06

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