Manipulating the metal-to-insulator transitions of VO<sub>2</sub> by combining compositing and doping strategies-Reference-Cited by-同舟云学术

Manipulating the metal-to-insulator transitions of VO₂ by combining compositing and doping strategies

Published:2023 Issue:33 Volume:25 Page:21908-21915
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhou Xuanchi¹^ORCID,Li Haifan¹,Shang Yanlong¹,Meng Fanqi²,Li Ziang¹,Meng Kangkang¹,Wu Yong¹,Xu Xiaoguang¹,Jiang Yong¹,Chen Nuofu³,Chen Jikun¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

2. School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

3. School of Renewable Energy, North China Electric Power University, Beijing, 102206, China

Abstract

The simultaneous regulations of the mechanical strength and the metal-to-insulator transition are achieved in the VO2 bulk, respectively, via compositing VO2 with high-melting-point oxides and substituting vanadium with high-valent dopants.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02224B

Reference33 articles.

1. Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

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3. Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

4. Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

5. Thermochromic Energy Efficient Windows: Fundamentals, Recent Advances, and Perspectives

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