Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions-Reference-Cited by-同舟云学术

Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions

Published:2018 Issue:35 Volume:10 Page:16703-16710
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Khan Muhammad Farooq¹²³⁴⁵^ORCID,Kim Hakseong⁵⁶⁷⁴,Nazir Ghazanfar¹²³⁴,Jung Suyong⁵⁶⁷⁴,Eom Jonghwa¹²³⁴^ORCID

Affiliation:

1. Department of Physics & Astronomy and Graphene Research Institute

2. Sejong University

3. Seoul 05006

4. Korea

5. Quantum Technology Institute

6. Korea Research Institute of Standards and Science

7. Daejeon 34113

Abstract

Vertical spin valve junctions consisting of MoS₂ layers have been fabricated by ultraclean fabrication method. The magnetoresistance of the spin valve junction increases as the thickness of MoS₂ layer is increased.

Funder

Korea Research Institute of Standards and Science

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR04518F

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