1T MoS<sub>2</sub>/CoS<sub>2</sub> heterostructures enabling enhanced resistive switching behavior in sodium alginate-based flexible memristors-Reference-Cited by-同舟云学术

1T MoS₂/CoS₂ heterostructures enabling enhanced resistive switching behavior in sodium alginate-based flexible memristors

Published:2023 Issue:48 Volume:11 Page:17050-17060
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jiao Zipan¹,Lan Xiaoyan¹,Zhou Xinglan¹,Wang Kunjie¹,Zong Haoran²,Zhang Peng¹^ORCID,Xu Benhua²

Affiliation:

1. Qinghai Provincial Engineering Research Center of High-Performance Light Metal Alloys and Forming, Qinghai Provincial Key Laboratory of New Light Alloys, Qinghai University, Xining 810016, China

2. Chemical Engineering College, Qinghai University, Xining 810016, China

Abstract

1T MoS2/CoS2 nanorods are embedded with sodium alginate as an interlayer, resulting in the construction of Al/1T MoS2/CoS2-SA/ITO/PET FRRAM devices with excellent resistive switching properties and good stability.

Funder

Natural Science Foundation of Qinghai Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC03147K

Reference66 articles.

1. Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi ₂ I ₇ /ITO Structure

2. Flexible Ferroelectric Devices: Status and Applications

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4. Multifunctional Bipolar and Complementary Resistive Switching in HOIP Memristors by the Control of Compliance Current

5. Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

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