Point-defect-induced colossal dielectric behavior in GaAs single crystals-Reference-Cited by-同舟云学术

Point-defect-induced colossal dielectric behavior in GaAs single crystals

Published:2017 Issue:42 Volume:7 Page:26130-26135
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhu M.¹²³⁴⁵^ORCID,Zhang N.¹²³⁴⁵,Wang H.¹²³⁴⁵,Li Y. D.¹²³⁴⁵,Huang S. G.¹²³⁴⁵,Li Q. J.¹²³⁴⁵,Yu Y.¹²³⁴⁵,Guo Y. M.¹²³⁴⁵,Liu X. L.⁶⁷⁸⁹⁵^ORCID,Wang C. C.¹²³⁴⁵

Affiliation:

1. Laboratory of Dielectric Functional Materials

2. School of Physics & Material Science

3. Anhui University

4. Hefei 230601

5. China

6. Chinese Acad Sci

7. Wuhan Inst Phys & Math

8. State Key Lab Magnet Resonance & Atom & Mol Phys

9. Wuhan 430071

Abstract

We herein reported colossal dielectric constant (CDC) behavior in GaAs single crystals.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA00058H

Reference39 articles.

1. Electron-pinned defect-dipoles for high-performance colossal permittivity materials

2. Optical Response of High-Dielectric-Constant Perovskite-Related Oxide

3. Origin of apparent colossal dielectric constants

4. Nonintrinsic origin of the colossal dielectric constants inCaCu3Ti4O12

5. Relaxor ferroelectrics

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