Fully solution-processed red tandem quantum dot light-emitting diodes with an EQE exceeding 35%-Reference-Cited by-同舟云学术

Fully solution-processed red tandem quantum dot light-emitting diodes with an EQE exceeding 35%

Published:2024 Issue:27 Volume:12 Page:10053-10060
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Yuhan¹²³⁴,Han Changfeng¹²³^ORCID,Li Ruifeng¹²³,Xiang Chaoyu¹²³^ORCID,Zhang Ting¹²³^ORCID,Qian Lei¹²³

Affiliation:

1. Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, P. R. China

2. Laboratory of Optoelectronic Information Technology and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China

3. Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China

4. College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310023, P. R. China

Abstract

By balancing carrier injection and improving charge generation efficiency, the EQE of red tandem QLEDs obtained by all-solution processing exceeds 35%.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Ningbo Municipality

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01175A

Reference52 articles.

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