Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities-Reference-Cited by-同舟云学术

Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Published:2020 Issue:2 Volume:8 Page:464-472
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Maas Klaasjan¹²³⁴⁵^ORCID,Villepreux Edouard⁶⁷⁸⁹,Cooper David⁶⁷⁸⁹,Jiménez Carmen¹²³⁴⁵^ORCID,Roussel Hervé¹²³⁴⁵,Rapenne Laetitia¹²³⁴⁵,Mescot Xavier¹²¹⁰⁵⁹,Rafhay Quentin¹²¹⁰⁵⁹,Boudard Michel¹²³⁴⁵,Burriel Mónica¹²³⁴⁵^ORCID

Affiliation:

1. Univ. Grenoble Alpes

2. CNRS

3. Grenoble INP (Institute of Engineering Univ. Grenoble Alpes)

4. LMGP

5. F-38000 Grenoble

6. CEA

7. LETI

8. F-38054 Grenoble

9. France

10. IMEP-LAHC

Abstract

The mixed ionic-electronic conductor La₂NiO_4+δ is used to build interface-type valence-change memories showing transient, multilevel and analog-type memristive properties.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC03972D

Reference52 articles.

1. Adaptive oxide electronics: A review

2. The diverse functions of short-term plasticity components in synaptic computations

3. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

4. Recent Advances in Memristive Materials for Artificial Synapses

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