An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition-Reference-Cited by-同舟云学术

An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition

Published:2021 Issue:12 Volume:9 Page:4322-4329
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Seung-Hwan¹²³^ORCID,Jeong Hyun-Jun¹²³^ORCID,Han Ki-Lim¹²³^ORCID,Baek GeonHo⁴²³,Park Jin-Seong¹²³⁴²^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University

2. Seoul 04763

3. Republic of Korea

4. Division of Nano-Scale Semiconductor Engineering, Hanyang University

Abstract

Indium oxide/indicone hybrid film, grown via in situ ALD and MLD processes, was used as an active layer in a flexible TFT. The hybrid TFT showed no significant changes in device performance, even after 200 000 rolling cycles.

Funder

Ministry of Trade, Industry and Energy

Hanyang University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05281G

Reference55 articles.

1. Introduction of lithography-compatible conducting polymer as flexible electrode for oxide-based charge-trap memory transistors on plastic poly(ethylene naphthalate) substrates

2. Effects of Repetitive Mechanical Stress on Flexible Oxide Thin-Film Transistors and Stress Reduction via Additional Organic Layer

3. Optimization of a SiOx/SiNxOyCz multilayer structure for a reliable gas diffusion barrier via low-temperature plasma-enhanced atomic layer deposition

4. Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications

5. 66-4: High Brightness Active Matrix Micro-LEDs with LTPS TFT Backplane

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