<i>Ex situ</i> Ge-doping of CZTS nanocrystals and CZTSSe solar absorber films-Reference-Cited by-同舟云学术

Ex situ Ge-doping of CZTS nanocrystals and CZTSSe solar absorber films

Published:2022 Issue: Volume:239 Page:70-84
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Naylor Matthew C.¹^ORCID,Tiwari Devendra¹²^ORCID,Sheppard Alice²,Laverock Jude³^ORCID,Campbell Stephen¹,Ford Bethan¹,Xu Xinya¹^ORCID,Jones Michael D. K.¹^ORCID,Qu Yongtao¹^ORCID,Maiello Pietro¹,Barrioz Vincent¹^ORCID,Beattie Neil S.¹^ORCID,Fox Neil A.²³,Fermin David J.²^ORCID,Zoppi Guillaume¹^ORCID

Affiliation:

1. Department of Mathematics, Physics and Electrical Engineering, Northumbria University, Ellison Building, Newcastle Upon Tyne, NE1 8ST, UK

2. School of Chemistry, University of Bristol, Cantock’s close, Bristol, BS8 1TS, UK

3. H.H. Wills Physics Laboratory, University of Bristol, Tyndall Av., Bristol, BS8 1TL, UK

Abstract

Ge doping is employed to aid the recrystallisation of Cu2ZnSnS4 nanocrystals. Opto-electrical properties are presented to describe Ge incorporation with a focus on the electronic interface between the Ge:Cu2ZnSn(S, Se), absorber and CdS buffer layer.

Funder

Newton Fund

Engineering and Physical Sciences Research Council

Royal Society of Chemistry

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/FD/D2FD00069E

Reference35 articles.

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