Two-dimensional MoSi2As4-based field-effect transistors integrating switching and gas-sensing functions
Author:
Affiliation:
1. Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China
Abstract
Funder
Taishan Scholar Project of Shandong Province
China Postdoctoral Science Foundation
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00637A
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