Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction-Reference-Cited by-同舟云学术

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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Published:2020 Issue:27 Volume:12 Page:14487-14493
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dzhigaev Dmitry¹²³⁴⁵^ORCID,Svensson Johannes⁶⁷³⁴⁵^ORCID,Krishnaraja Abinaya⁶⁷³⁴⁵^ORCID,Zhu Zhongyunshen⁶⁷³⁴⁵^ORCID,Ren Zhe¹²³⁴⁵,Liu Yi¹²³⁴⁵^ORCID,Kalbfleisch Sebastian⁸³⁹⁵,Björling Alexander⁸³⁹⁵^ORCID,Lenrick Filip¹²³⁴⁵^ORCID,Balogh Zoltan Imre¹⁰¹¹¹²¹³,Hammarberg Susanna¹²³⁴⁵^ORCID,Wallentin Jesper¹²³⁴⁵^ORCID,Timm Rainer¹²³⁴⁵^ORCID,Wernersson Lars-Erik⁶⁷³⁴⁵^ORCID,Mikkelsen Anders¹²³⁴⁵

Affiliation:

1. Division of Synchrotron Radiation Research and NanoLund

2. Department of Physics

3. Lund University

4. SE-221 00 Lund

5. Sweden

6. Electrical and Information Technology

7. Department of Engineering

8. MAX IV Laboratory

9. 22100 Lund

10. DTU CEN

11. DTU

12. Lyngby

13. Denmark

Abstract

Scanning X-ray nanodiffraction applied to map the strain field inside a realistic nanowire transistor embedded in device processing layers.

Funder

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR02260H

Reference44 articles.

1. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

2. Nanometre-scale electronics with III–V compound semiconductors

3. Manipulating Surface States of III–V Nanowires with Uniaxial Stress

4. Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

5. Differential phase-contrast dark-field electron holography for strain mapping

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3. Design and performance of a dedicated coherent X-ray scanning diffraction instrument at beamline NanoMAX of MAX IV;Journal of Synchrotron Radiation;2022-03-16

4. Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction;Nanoscale;2022

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