Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot-Reference-Cited by-同舟云学术

Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Published:2023 Issue:20 Volume:5 Page:5562-5569
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Rezeq Moh'd¹²,Abbas Yawar¹²^ORCID,Wen Boyu³,Wasilewski Zbig³,Ban Dayan³

Affiliation:

1. Department of Physics, Khalifa University of Science and Technology, POB 127788, Abu Dhabi, United Arab Emirates

2. System on Chip Centre, Khalifa University of Science and Technology, POB 127788, Abu Dhabi, United Arab Emirates

3. Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, ON, Canada

Abstract

Indium arsenide (InAs) quantum dots (QDs) grown by molecular beam epitaxy (EBM) on gallium arsenide (GaAs) substrates have exhibited quantized charge-trapping characteristics.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D3NA00638G

Reference31 articles.

1. The End of Moore's Law: A New Beginning for Information Technology

2. Overview of emerging nonvolatile memory technologies

3. Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

4. Energy harvesting optical modulators with sub-attojoule per bit electrical energy consumption

5. Preparation, synthesis, properties and characterization of graphene-based 2D nano-materials for biosensors and bioelectronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correction: Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot;Nanoscale Advances;2024