Surface fluorination treated indium-based quantum dots as a nonlinear saturable absorber for a passive Q-switched 1.0 μm laser-Reference-Cited by-同舟云学术

Surface fluorination treated indium-based quantum dots as a nonlinear saturable absorber for a passive Q-switched 1.0 μm laser

Published:2022 Issue:18 Volume:3 Page:7037-7042
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Zhang Xiaoli¹^ORCID,Lou Yajun²,Hu Lei¹,Duan Weijia¹,Chen Guojie³,Fan Bingfeng³,Zhao Weiren¹^ORCID,Zhang Xinhai²

Affiliation:

1. Guangdong Province Key Laboratory of Information Photonics Technology, School of Physics and Opto-electronic Engineering, Guangzhou, 510006, China

2. Department of Electric Electronic & Engineering, Southern University of Science and Technology, Shenzhen, 518055, China

3. Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan university, Foshan 528225, China

Abstract

InP/ZnSe/ZnS QDs with surface fluorination treatment were fabricated and their nonlinear saturable absorption properties explored. Passive Q-switching of diode-pumped Nd:YVO4 near-infrared laser at 1064 nm (∼1.0 μm) using InP-HF QDs as saturable absorber (SA) is observed.

Funder

Guangdong University of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00442A

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