Lattice dynamics of Ge1−xSnx alloy nanowires-Reference-Cited by-同舟云学术

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Lattice dynamics of Ge_1−xSn_x alloy nanowires

Published:2022 Issue:19 Volume:14 Page:7211-7219
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Raha Sreyan¹,Biswas Subhajit²,Doherty Jessica²,Mondal Prasanna Kumar³,Holmes Justin D.²^ORCID,Singha Achintya¹^ORCID

Affiliation:

1. Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road, Kolkata 700009, India

2. School of Chemistry & Advanced Materials and Bioengineering Research (AMBER) Centre, University College Cork, Cork T12 YN60, Ireland

3. Department of Physics, Surendranath College, Kolkata 700009, India

Abstract

Alloying group IV semiconductors offers an effective way to engineer their electronic properties and lattice dynamics.

Funder

Science and Engineering Research Board

Science Foundation Ireland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR00743F

Reference45 articles.

1. Achieving direct band gap in germanium through integration of Sn alloying and external strain

2. Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates

3. Ge–Sn semiconductors for band-gap and lattice engineering

4. Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

5. Germanium tin: silicon photonics toward the mid-infrared [Invited]

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