The effect of terminal substituents on the electronic properties of rod-shaped [HGaNH]n oligomers-Reference-Cited by-同舟云学术

The effect of terminal substituents on the electronic properties of rod-shaped [HGaNH]n oligomers

Published:2016 Issue:29 Volume:18 Page:19859-19865
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Pomogaeva A. V.¹²³⁴⁵^ORCID,Timoshkin A. Y.¹²³⁴⁵

Affiliation:

1. Inorganic Chemistry Group

2. Institute of Chemistry

3. St. Petersburg State University

4. Universitetskaya nab. 7/9

5. St. Petersburg

Abstract

The effect of electron-donating and electron-withdrawing terminal groups on the electronic structure of the rod-shaped X₃[HGaNH]_nY₃ or needle-shaped XGa[HGaNH]_nNY oligomers (X, Y = H, CH₃, F, CF₃; n = 9, 30 and 114) was computationally studied at the B3LYP/SVP level of density functional theory.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP02576E

Reference21 articles.

1. Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination

2. InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact

3. Single gallium nitride nanowire lasers

4. GaN Nanobelt-Based Strain-Gated Piezotronic Logic Devices and Computation

5. Coaxial Group III−Nitride Nanowire Photovoltaics

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