One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching-Reference-Cited by-同舟云学术

One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching

Published:2017 Issue:25 Volume:5 Page:6156-6162
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Ni¹²³⁴⁵,Shao Zhibin¹²³⁴⁵^ORCID,Xia Feifei¹²³⁴⁵,Jiang Tianhao¹²³⁴⁵,Wu Xiaofeng¹²³⁴⁵,Zhang Xiujuan¹²³⁴⁵,Jie Jiansheng¹²³⁴⁵^ORCID,Zhang Xiaohong¹²³⁴⁵

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM)

2. Collaborative Innovation Center of Suzhou Nano Science and Technology (Nano-CIC)

3. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices

4. Soochow University

5. Suzhou

Abstract

A one-step fabrication of CdS:Mo–CdMoO₄core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01230F

Reference38 articles.

1. Stretchable Organic Semiconductor Devices

2. Flexible Organic Tribotronic Transistor Memory for a Visible and Wearable Touch Monitoring System