Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO<sub>2</sub> nanobeams-Reference-Cited by-同舟云学术

Effects of oxygen vacancies and interfacial strain on the metal–insulator transition of VO₂ nanobeams

Published:2024 Issue:14 Volume:26 Page:10737-10745
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Guo Xitao¹^ORCID,Liu Xin¹,Zafar Zainab²^ORCID,Cheng Guiquan¹,Li Yunhai³^ORCID,Nan Haiyan⁴^ORCID,Lin Lianghua¹,Zou Jijun¹

Affiliation:

1. Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China

2. Experimental Physics Division, National Centre for Physics, Islamabad 44000, Pakistan

3. Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China

4. Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China

Abstract

This work demonstrates the crucial roles of oxygen vacancies and interfacial strain in controlling the MIT in VO2 NBs and elucidates the physics behind MIT modulation based on crystal field theory and first-principles calculations.

Funder

Natural Science Foundation of Jiangxi Province

National Natural Science Foundation of China

East China University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP06040C

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