Electrical-field-driven metal–insulator transition tuned with self-aligned atomic defects-Reference-Cited by-同舟云学术

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Electrical-field-driven metal–insulator transition tuned with self-aligned atomic defects

Published:2015 Issue:33 Volume:7 Page:14055-14061
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Syrlybekov Askar¹²³⁴¹,Wu Han-Chun¹²³,Mauit Ozhet⁴¹⁵⁶⁷,Wu Ye-Cun¹²³,Maguire Pierce⁴¹⁵⁶⁷,Khalid Abbas⁴¹⁵⁶⁷,Ó Coileáin Cormac¹²³⁴¹,Farrell Leo⁴¹⁵⁶⁷,Heng Cheng-Lin¹²³,Abid Mohamed⁸⁹¹⁰,Liu Huajun¹¹¹²¹³,Yang Li¹⁴¹⁵,Zhang Hong-Zhou⁴¹⁵⁶⁷,Shvets Igor V.⁴¹⁵⁶⁷

Affiliation:

1. School of Physics

2. Beijing Institute of Technology

3. Beijing 100081, People's Republic of China

4. CRANN

5. Trinity College

6. University of Dublin

7. Dublin 2, Ireland

8. KSU-aramco Center

9. King Saud University

10. Riyadh 11451, Saudi Arabia

11. Institute of Plasma Physics

12. Chinese Academy of Sciences

13. Hefei 230031, People's Republic of China

14. Electronic Engineering Institute

15. Hefei, People's Republic of China

Abstract

An anisotropic resistance switching behavior has been observed in Fe₃O₄ thin films on stepped SrTiO₃ substrates.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR03251B

Reference39 articles.

1. High-Density Crossbar Arrays Based on a Si Memristive System

2. Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

3. Nanoionics-based resistive switching memories

4. Molecular Memories That Survive Silicon Device Processing and Real-World Operation

5. Switching in organic polymer films

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1. Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires;SPIN;2019-03

2. Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures;Chinese Physics B;2018-02

3. Epitaxial magnetite nanorods with enhanced room temperature magnetic anisotropy;Nanoscale;2017

4. Influence of the vicinal surface on the anisotropic dielectric properties of highly epitaxial Ba0.7Sr0.3TiO3thin films;Nanoscale;2017

5. Competition Between Anti-Phase Boundaries and Charge-Orbital Ordering in Epitaxial Stepped Fe3O4(100) Thin Films;SPIN;2016-11-22

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