Electron transfer driving force as the criterion for efficient n-doping of organic semiconductors with DMBI-H derivatives-Reference-Cited by-同舟云学术

Electron transfer driving force as the criterion for efficient n-doping of organic semiconductors with DMBI-H derivatives

Published:2023 Issue:28 Volume:11 Page:15416-15425
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Xu Chunlin¹²^ORCID,Wang Dong¹²^ORCID

Affiliation:

1. Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, People's Republic of China

2. MOE Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China

Abstract

The electron affinity (EA) of OSCs and the ionization energy (IE) of dopant radicals (D˙s) are two molecular descriptors for the n-doping reaction with DMBI-H derivatives, and EA(OSC) − IE(D·) > 1.0 eV is proposed as a criterion for efficient doping.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D3TA02943C

Reference63 articles.

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