Effects of dangling bonds and diameter on the electronic and optical properties of InAs nanowires-Reference-Cited by-同舟云学术

Effects of dangling bonds and diameter on the electronic and optical properties of InAs nanowires

Published:2015 Issue:30 Volume:5 Page:23320-23325
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Gordanian E.¹²³⁴⁵,Jalali-Asadabadi S.¹²³⁴⁵,Ahmad Iftikhar⁶⁷⁸⁹¹,Rahimi S.¹²³⁴⁵,Yazdani-Kachoei M.¹²³⁴⁵

Affiliation:

1. Department of Physics

2. Faculty of Science

3. University of Isfahan (UI)

4. Isfahan 81746-73441

5. Iran

6. Center for Computational Materials Science

7. University of Malakand

8. Chakdara

9. Pakistan

Abstract

In this article we explore the effects of dangling bonds and diameter on the electronic properties of the wurtzite InAs nanowires (NWs) using the density functional theory.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA13168A

Reference26 articles.

1. Defect-free InP nanowires grown in [001] direction on InP (001)

2. Structural properties of narrow hexagonal MnAs nanowires: Role of edge atoms

3. Electron Emission from Individual Indium Arsenide Semiconductor Nanowires

4. Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

5. Indium arsenide nanowire field-effect transistors for pH and biological sensing

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