First principles studies on the electronic and contact properties of single layer 2H-MoS<sub>2</sub>/1T′-MX<sub>2</sub> heterojunctions-Reference-Cited by-同舟云学术

First principles studies on the electronic and contact properties of single layer 2H-MoS₂/1T′-MX₂ heterojunctions

Published:2022 Issue:5 Volume:24 Page:3289-3295
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yu Jiao¹,Xia Cai-Juan¹,Hu Zhen-Yang¹,Sun Jian-Ping²,Hao Xiao-Peng²,Wang Lu-Xia³^ORCID,Fang Qing-Long¹^ORCID

Affiliation:

1. School of Science, Xi’an Polytechnic University, Xi’an, 710048, China

2. Division of Thermophysics and Process Measurements, National Institute of Metrology, Beijing, 100013, China

3. Department of Physics, University of Science and Technology Beijing, Beijing, 100083, China

Abstract

Two-dimensional (2D) transition metal chalcogenide (TMD) field-effect transistors (FETs) are constructed via in-plane heterojunction contacts between the semiconducting 2H phase (as the channel) and the metallic 1T′ phase (as the electrode).

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shaanxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP05077J

Reference43 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. The rise of graphene

3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

5. Single-layer MoS2 transistors

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