Unveiling concentration effects on the structural and optoelectronic characteristics of Zn1−xCdxS (x = 0, 0.25, 0.50, 0.75, 1) cubic semiconductors: a theoretical study

Author:

Iqbal Muhammad Aamir12ORCID,Malik Maria12,Zahid Abu3,Islam Md. Rasidul4,Arellano-Ramírez Iván D.5,Al-Bahrani Mohammed6

Affiliation:

1. Centre of Excellence in Solid State Physics, University of the Punjab, Lahore 54590, Pakistan

2. School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

3. Department of Computer Science, Lamar University, Beaumont, Texas-77705, USA

4. Department of Electrical and Electronic Engineering, Bangamata Sheikh Fojilatunnesa Mujib Science and Technology University, Melandah, Jamalpur-2012, Bangladesh

5. Department of Physics, Universidad Tecnológica de Pereira, Pereira 660003, Colombia

6. Air Conditioning and Refrigeration Techniques Engineering Department, Al-Mustaqbal University College, Babylon, 51001, Iraq

Abstract

This study explores the concentration dependent optoelectronic properties of Zn1−xCdxS (x = 0, 0.25, 0.50, 0.75, 1) cubic direct bandgap semiconductors using DFT within mBJ potential.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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