Effects of Mo back-contact annealing on surface potential and carrier transport in Cu2ZnSnS4 thin film solar cells-Reference-Cited by-同舟云学术

Effects of Mo back-contact annealing on surface potential and carrier transport in Cu2ZnSnS4 thin film solar cells

Author:

Kim Juran¹²³⁴,Kim Gee Yeong¹²³⁴,Jo William¹²³⁴,Yang Kee-Jeong⁵⁶⁷⁴,Sim Jun-Hyoung⁵⁶⁷⁴,Kim Dae-Hwan⁵⁶⁷⁴,Kang Jin-Kyu⁵⁶⁷⁴

Affiliation:

1. Department of Physics

2. Ewha Womans University

3. Seoul

4. Korea

5. Convergence Research Center for Solar Cell

6. DGIST

7. Daegu

Abstract

Mo annealing temperature of 500 °C enhances the electrical properties of CZTS absorber, leading to better device performance.

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference57 articles.

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